unit: mm sod-123 3.7 +0.1 -0.1 2.7 +0.1 -0.1 0.55 +0.1 -0.1 0.1max 1.6 +0.1 -0.1 0.50 0.35 1.1 +0.05 -0.05 0.1 +0.05 -0.02 BA782; ba783 absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 35 v forward continuous current at tamb = 25 i f 100 ma junction temperature t j 125 storage temperature range t s -55to+150 electrical characteristics ta = 25 parameter symbol min typ max unit forward voltage at i f = 100 ma v (br) 1v leakage current at v r =20v i r 50 na dynamic forward resistance at f = 50 to 1000 mhz, i f = 3 ma BA782 0.7 ba783 1.2 at f = 50 to 1000 mhz, i f = 10 ma BA782 0.5 ba783 0.9 capacitance at v r =1v,f=1mhz 1.5 at v r = 3 v, f = 1 mhz BA782 1.25 ba783 1.2 series inductance across case ls 2.5 nh c tot pf r f features silicon epitaxial planar diode switches for high-speed switching application and tv tuners in the frequency range of 50 1000 mhz. the dynamic for ward resistance is constant and very small over a wide range of frequency and forward current.the reverse capacitance is also small and largely independent of the reverse voltage. these diodes are also available in sod-323 case with the type designations BA782s and ba783s. product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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